| PART |
Description |
Maker |
| KMM366S1623AT-G8 KMM366S1623AT KMM366S1623AT-G0 KM |
16M x 64 SDRAM DIMM
16Mx64 SDRAM DIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| M368L1713CTL-LB3 M368L1713CTL M368L1713CTL-CA2 M36 |
128MB DDR SDRAM MODULE (16Mx64 based on 16Mx8 DDR SDRAM) Unbuffered 184pin DIMM 64-bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| K4S560832D-TC1H K4S560832D-TC1L K4S560832D-TC7A K4 |
32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HDD32M72B18RW-13A HDD32M72B18RW-13B HDD32M72D18RPW |
DDR SDRAM Module 256Mbyte (32Mx72bit), based on 16Mx8, 4Banks, 4K Ref., 184Pin-DIMM with PLL & Register
DDR SDRAM Module 256Mbyte (32Mx72bit), based on 16Mx8, 4Banks, 4K Ref., 184Pin-DIMM with PLL & Register 256MB的DDR SDRAM内存模块2Mx72bit），6Mx8BanksK的参考依据。，184Pin与锁相环内存
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
| HMT84GR7MMR4A-H9 HMT84GR7MMR4A-G7 HMT451R7MFR8A HM |
DDR3L SDRAM Registered DIMM Based on 4Gb M-die
|
Hynix Semiconductor
|
| HMT84GR7AMR4C-G7 HMT41GR7AFR4C-H9 HMT42GR7AFR4C-H9 |
DDR3 SDRAM Registered DIMM Based on 4Gb A-die
|
Hynix Semiconductor
|
| HMT325V7EFR8A-PB HMT325V7EFR8A-RD HMT325V7EFR8A-H9 |
DDR3L SDRAM VLP Registered DIMM Based on 2Gb E-die
|
Hynix Semiconductor
|
| HMT82GV7MMR4A HMT82GV7MMR4A-G7 HMT82GV7MMR4A-H9 HM |
DDR3L SDRAM VLP Registered DIMM Based on 4Gb M-die
|
Hynix Semiconductor
|
| HMT41GV7CMR4A-H9 HMT325V7CFR8A HMT325V7CFR8A-H9 HM |
DDR3L SDRAM VLP Registered DIMM Based on 2Gb C-die
|
Hynix Semiconductor
|
| M368L2923MT1 |
128Mx64 DDR SDRAM 184pin DIMM based on 64Mx8 Data Sheet
|
Samsung Electronic
|
| M381L3313CT1 |
32Mx72 DDR SDRAM 184pin DIMM based on 16Mx8 Data Sheet
|
Samsung Electronic
|
